UNIC

Chips

2011

27Description: A low phase noise 5.6GHz colpitts VCO with no startup issue

Process: 130nm CMOS

 

 

26Description: A high power 0.46-0.48 THz frequency doubler

Process: 130nm SiGe:C process

 

26Description: Wideband Non-Foster Negative Impedance Circuit for Wireless Applications

Process: 65nm CMOS

 

26Description: A high power 0.92-0.944 THz frequency quadrupler radiator

Process: 130nm SiGe:C process

 

26Description: A 175 GHz oscillator with 3 mW output power and 11.7% DC-to-RF efficiency and -195.4 dBc/Hz phase noise FoM at 1 MHz offset frequency

Process: 130nm SiGe

 

26Description: A 320GHz Subharmonic Mixing Coherent Imaging Transceiver (Transmitter)

Process: 130nm SiGe BiCMOS

 

26Description: A 320GHz Subharmonic Mixing Coherent Imaging Transceiver (Receiver)

Process: 130nm SiGe BiCMOS

 

2011

27Description: A low phase noise cross-coupled VCO with a FOM of almost 190dBc/Hz at 10KHz-2MHz offset frequencies referring to a 2.4GHz carrier

Process: 130nm CMOS

 

2011

27Description: A 300GHz VCO with 0.76mW output power and 13GHz tuning range

Process: 65nm CMOS

 

26Description: A 0.6V 2.5GHz-5.6GHz mode-switching LC VCO for GSM/EDGE/WCDMA

Process: 65nm CMOS

 

23Description: A 240GHz passive frequency doubler

Process: 65nm CMOS

 

 

24Description: A 480GHz passive frequency doubler

Process: 65nm CMOS

 

 

25Description: A 480GHz passive frequency doubler with built-in wideband antenna

Process: 65nm CMOS

 

11Description: An Improved pico-second Pulse Generator Using Soliton resonance

Process: 130nm CMOS

 

11Description: A Low Noise Amplifier at 8.75GHz Using Noise Squeezing

Process: 130nm CMOS

 

11Description: A Passive Frequency Doubler at 20GHz

Process: 130nm CMOS

 

 

11Description: A 107GHz High Gain Amplifier

Process: 130nm CMOS

 

 

2010

10Description: A 121 GHz Oscillator, Output Power of ~0.5mW

Process: 130nm CMOS

 

10Description: A 256 GHz Oscillator, Output Power of ~20uW

Process: 130nm CMOS

 

10Description: A 482 GHz Oscillator, Output Power of ~0.1mW

Process: 65nm CMOS

 

10Description: A 482 GHz Oscillator, Output Power of ~0.16mW

Process: 65nm CMOS

 

10Description: A Low Noise Amplifier at 8GHz Using Noise Squeezing

Process: 65nm CMOS

 

10Description: A 220-275 GHz High Efficiency Frequency Doubler

Process: 65nm CMOS

 

10Description: A Multi-Band Oscillator

Process: 65nm CMOS

 

 

10Description: A Delay-Based 4b, 8GS/s, 20mW ADC in 65nm CMOS

 

 

09

Description: A Multi-Phase Oscillator with Low Phase Noise Performance

 

 

Description: The First Passive CMOS Divider at 20GHz Using a Parametric Resonator

Process: 130 nm CMOS

 

Description: A Low Phase Noise Oscillator

Process: 65nm CMOS

 

 

Description: A Doppler-Based Frequency Multiplier

Process: 130nm CMOS

 

Description: An Inductor-less TIA with 6GHz Bandwidth

Process: 130nm CMOS

 

 

2008

08Description: Electrical Super-Prism as a High-Q Terahertz Filter

Process: 130 nm CMOS

 

08 Description: A Delay-Based 4b, 1GS/s ADC

Process: 65nm CMOS

 

 

08Description: A pico-second Pulse Generator using Soliton Resonance

Process: 130nm CMOS

 

pre08

21Description: A 70-100 GHz Power Amplifier with 120mW Output Power at 85GHz

Process: 130nm BiCMOS

 

Description: A Pulse Narrowing (2.5psec) and Edge Sharpening (1psec) Transmission Line

Process: 180nm BiCMOS22